Development of ‘Neuromorphic Semiconductor Device’ That Effectively Suppresses Leakage Current While Maintaining a Constant Information Bandwidth / Professor Lee Yoon Jung (Department of Electrical Engineering)
- 26.08.10 / 홍유민
Professor Lee Yoon Jung of the Department of Electrical Engineering at our university’s College of Engineering, in collaboration with research teams led by Professor Lee Sang-han of the Department of New Materials Engineering at Gwangju Institute of Science and Technology (GIST), Professor Jang Ho-won of the Department of Materials Science and Engineering at Seoul National University, and Professor Joshua Yang of the Department of Electrical and Computer Engineering at the University of Southern California, has developed a neuromorphic semiconductor device that stores information at a fixed width, maintains it stably, and effectively suppresses leakage current.
The joint research team solved this problem by simultaneously implementing, within a single device, both a memory function for storing information and a magnetic rectification function that allows current to flow in only one direction.
The research findings were published in the international academic journal *Nature Communications*.
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Development of ‘Neuromorphic Semiconductor Device’ That Effectively Suppresses Leakage Current While Maintaining a Constant Information Bandwidth / Professor Lee Yoon Jung (Department of Electrical Engineering) |
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Professor Lee Yoon Jung of the Department of Electrical Engineering at our university’s College of Engineering, in collaboration with research teams led by Professor Lee Sang-han of the Department of New Materials Engineering at Gwangju Institute of Science and Technology (GIST), Professor Jang Ho-won of the Department of Materials Science and Engineering at Seoul National University, and Professor Joshua Yang of the Department of Electrical and Computer Engineering at the University of Southern California, has developed a neuromorphic semiconductor device that stores information at a fixed width, maintains it stably, and effectively suppresses leakage current. The joint research team solved this problem by simultaneously implementing, within a single device, both a memory function for storing information and a magnetic rectification function that allows current to flow in only one direction. The research findings were published in the international academic journal *Nature Communications*.
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