2024 IEEE Seoul Section Student Paper Contest Award / Students of the Intelligent Semiconductor Devices and Integrated Circuits Laboratory (S!LK)
- 24.12.19 / 이정민
Students from the S!LK Lab in the Department of Intelligent Semiconductors and Displays at Kookmin University (supervised by Professors KIM,DONG-MYUNG, Dae-hwan Kim, Sungjin Choi, and Jongho Bae) won three bronze medals at the 2024 IEEE Seoul Section Student Paper Contest. The IEEE Seoul Section Student Paper Contest is a prestigious paper presentation competition held annually by the IEEE Seoul Section, where graduate students present their research results in English and select the best papers.
The titles of the papers presented by the students are as follows.
1. Jung-Yeon Lim: Security improvement for physically unclonable functional applications with a lateral dual-gate carbon nanotube field effect transistor
2. Kyung-Soo Min: Evaluation of Program/Erase Characteristics in Amorphous Indium-Gallium-Zinc-Oxide-based Flash Memory via TCAD Simulation
3. Choi, Yubin: Analysis of charge trapping mechanism through transient response modeling of amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
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2024 IEEE Seoul Section Student Paper Contest Award / Students of the Intelligent Semiconductor Devices and Integrated Circuits Laboratory (S!LK) |
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Students from the S!LK Lab in the Department of Intelligent Semiconductors and Displays at Kookmin University (supervised by Professors KIM,DONG-MYUNG, Dae-hwan Kim, Sungjin Choi, and Jongho Bae) won three bronze medals at the 2024 IEEE Seoul Section Student Paper Contest. The IEEE Seoul Section Student Paper Contest is a prestigious paper presentation competition held annually by the IEEE Seoul Section, where graduate students present their research results in English and select the best papers.
The titles of the papers presented by the students are as follows. 1. Jung-Yeon Lim: Security improvement for physically unclonable functional applications with a lateral dual-gate carbon nanotube field effect transistor 2. Kyung-Soo Min: Evaluation of Program/Erase Characteristics in Amorphous Indium-Gallium-Zinc-Oxide-based Flash Memory via TCAD Simulation 3. Choi, Yubin: Analysis of charge trapping mechanism through transient response modeling of amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
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